2SD1119 features low collector-emitter saturation voltage v ce(sat). satisfactory operation performances at high efficiency with the lowvoltage power supply. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 7v collector current i c 3a peak collector current i cp 5a collector power dissipation p c 1w junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter voltage v ceo i c =1ma,i b =0 25 v emitter-base voltage v ebo i e =10a,i c =0 7 v collector-base cutoff current i cbo v cb =10v,i b =0 0.1 a v ce =2v,i c = 0.5 a 230 600 v ce =2v,i c = 2 a 150 collector-emitter saturation voltage v ce(sat) i c =3a,i b =0.1a 1 v transition frequency f t v cb =6v,i e = -50 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb =20v,i e =0,f=1mhz 50 pf h fe forward current transfer ratio h fe classification marking rank q r h fe 230 380 340 600 t smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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